Title :
Pnp HBT with 66 GHz fmax
Author :
Slater, D.B., Jr. ; Enquist, P.M. ; Hutchby, J.A. ; Morris, A.S. ; Trew, R.J.
Author_Institution :
Res. Triangle Inst., Research Triangle Park, NC, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
The total emitter to collector delay for a Pnp AlGaAs/GaAs HBT has been reduced to 4.8 ps by employing a thin base (325 /spl Aring/) and collector (2300 /spl Aring/). Simultaneously, a low base sheet resistance of 170 ohms/square was achieved with tellurium doping. A higher collector doping than is typically used permitted operation at collector current densities in excess of 5×104 A/cm2. A single emitter (2×4 μm2) and a single base contact device topology has an fT and fmax of 33 and 66 GHz, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; solid-state microwave devices; tellurium; 2300 angstrom; 325 angstrom; 33 GHz; 4.8 ps; 66 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT; GaAs:Te; Kirk effect; Pnp HBT; collector current densities; collector doping; current gain; cutoff frequency; emitter to collector delay; low base sheet resistance; maximum frequency of operation; single emitter/single base contact device topology; thin base; thin collector; Area measurement; Capacitance; Current measurement; Delay; Electrical resistance measurement; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Polyimides; Voltage;
Journal_Title :
Electron Device Letters, IEEE
