DocumentCode
1085982
Title
Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop
Author
Temple, Victor A K ; Holroyd, Forrest W.
Author_Institution
General Electric Company, Schenectady, NY
Volume
30
Issue
7
fYear
1983
fDate
7/1/1983 12:00:00 AM
Firstpage
782
Lastpage
790
Abstract
The trade-off between forward voltage drop and device turn-off time can be significantly altered by the proper location of a narrow region of lower lifetime, oriented perpendicular to the current flow. The proposed structure is discussed and calculations are presented to illustrate this alteration. In addition, differences in thyristor turnoff and diode turn-off in an inductive circuit and when driven by a perfect voltage source are investigated. Portions of this investigation were reported at the 1979 and 1980 PESC Conferences.
Keywords
Charge carrier lifetime; Circuits; Gold; Radiative recombination; Semiconductor device doping; Semiconductor devices; Semiconductor diodes; Semiconductor impurities; Thyristors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21210
Filename
1483111
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