Title :
Hydrogen permeation, Si defect generation, and their interaction during CHF/sub 3//O/sub 2/ contact etching
Author :
Awadelkarim, O.O. ; Mikulan, P.I. ; Gu, T. ; Ditizio, R.A. ; Fonash, S.J.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF/sub 3/-based chemistries were studied using SiO/sub 2//Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.<>
Keywords :
characteristics measurement; deep level transient spectroscopy; elemental semiconductors; semiconductor technology; silicon; silicon compounds; sputter etching; CHF/sub 3//O/sub 2/ contact etching; SiO/sub 2/-Si; SiO/sub 2//Si structures; capacitance-voltage measurements; deep-level transient spectroscopy measurements; defect generation; hydrogen permeation; magnetic field intensity; overetch percentage; passivation; process-parameter space; reactive ion etching; Boron; Capacitance measurement; Doping; Etching; Hydrogen; Magnetic field measurement; Magnetic fields; Monitoring; Plasma applications; Spectroscopy;
Journal_Title :
Electron Device Letters, IEEE
