Title :
Comparison of the sensitivity to heavy ions of SRAM´s in different SIMOX technologies
Author :
Ferlet-Cavrois, V. ; Musseau, O. ; Leray, J.L. ; Coïc, Y.M. ; Lecarval, G. ; Guichard, E.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
3/1/1994 12:00:00 AM
Abstract :
We propose a simple model to evaluate the sensitivity to heavy ions of SRAM´s in different CMOS/SIMOX technologies. The critical Linear Energy Transfer LETc and the asymptotic cross section /spl sigma/ characterize the sensitivity of a memory. Theoretical values of LETc and /spl sigma/ are calculated according to intrinsic characteristics of the technology (thickness of the silicon layer, lateral bipolar amplification) and design parameters of the memory, LETc and /spl sigma/ are then compared to experiments.<>
Keywords :
CMOS integrated circuits; SIMOX; SRAM chips; ion beam effects; 16 kbit; 64 kbit; CMOS/SIMOX technology; LETc; SRAM; Si layer thickness; critical linear energy transfer; heavy ion sensitivity; lateral bipolar amplification; memory design parameters; model; CMOS technology; Capacitance; Electronic components; Energy exchange; MOS devices; Pulp manufacturing; Random access memory; Semiconductor device modeling; Silicon;
Journal_Title :
Electron Device Letters, IEEE
