DocumentCode :
1086003
Title :
Polycrystalline silicon-on-metal strain gauge transducers
Author :
Erskine, James C.
Author_Institution :
General Motors Research Laboratories, Warren, MI
Volume :
30
Issue :
7
fYear :
1983
fDate :
7/1/1983 12:00:00 AM
Firstpage :
796
Lastpage :
801
Abstract :
The characteristics of polycrystalline silicon-on-metal strain gauge transducers are reported. This strain gauge material is stable, rugged, operates over a wide temperature range, and has a gauge factor intermediate between that of single-crystal Si, having the same carrier concentration, and that of metal wires and thin films. A model relating the polycrystalline silicon gauge factor and its temperature dependence to that of single-crystal Si strain gauges is developed and shown to adequately describe transducer properties.
Keywords :
Automotive applications; Capacitive sensors; Inorganic materials; Semiconductor films; Silicon; Strain measurement; Substrates; Temperature distribution; Transducers; Wires;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21212
Filename :
1483113
Link To Document :
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