DocumentCode
1086003
Title
Polycrystalline silicon-on-metal strain gauge transducers
Author
Erskine, James C.
Author_Institution
General Motors Research Laboratories, Warren, MI
Volume
30
Issue
7
fYear
1983
fDate
7/1/1983 12:00:00 AM
Firstpage
796
Lastpage
801
Abstract
The characteristics of polycrystalline silicon-on-metal strain gauge transducers are reported. This strain gauge material is stable, rugged, operates over a wide temperature range, and has a gauge factor intermediate between that of single-crystal Si, having the same carrier concentration, and that of metal wires and thin films. A model relating the polycrystalline silicon gauge factor and its temperature dependence to that of single-crystal Si strain gauges is developed and shown to adequately describe transducer properties.
Keywords
Automotive applications; Capacitive sensors; Inorganic materials; Semiconductor films; Silicon; Strain measurement; Substrates; Temperature distribution; Transducers; Wires;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21212
Filename
1483113
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