Title :
Polycrystalline silicon-on-metal strain gauge transducers
Author :
Erskine, James C.
Author_Institution :
General Motors Research Laboratories, Warren, MI
fDate :
7/1/1983 12:00:00 AM
Abstract :
The characteristics of polycrystalline silicon-on-metal strain gauge transducers are reported. This strain gauge material is stable, rugged, operates over a wide temperature range, and has a gauge factor intermediate between that of single-crystal Si, having the same carrier concentration, and that of metal wires and thin films. A model relating the polycrystalline silicon gauge factor and its temperature dependence to that of single-crystal Si strain gauges is developed and shown to adequately describe transducer properties.
Keywords :
Automotive applications; Capacitive sensors; Inorganic materials; Semiconductor films; Silicon; Strain measurement; Substrates; Temperature distribution; Transducers; Wires;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21212