DocumentCode :
1086021
Title :
X-band self-aligned gate enhancement-mode InP MISFET´s
Author :
Itoh, Tomohiro ; Ohata, Keiichi
Author_Institution :
NEC Corporation, Kawasaki, Japan
Volume :
30
Issue :
7
fYear :
1983
fDate :
7/1/1983 12:00:00 AM
Firstpage :
811
Lastpage :
815
Abstract :
Self-aligned gate enhancement-mode InP/SiO2 MISFET\´s with ∼0.8-µm channel length were successfully fabricated on an Fe-doped semi-insulating substrate. The fabricated MISFET\´s exhibited very high transconductance, as high as 200 mS/mm, and good 
-band operation, especially marked high-power-output characteristics. The minimum noise figure at 4 GHz was 1.87 dB with 10.0-dB associated gain. 1.17 W/mm and 1.0 W/mm power outputs were obtained at 6.5 and 11.5 GHz, respectively. 43.5-percent maximum power-added efficiency was attained at 6.5 GHz.
-band operation, especially marked high-power-output characteristics. The minimum noise figure at 4 GHz was 1.87 dB with 10.0-dB associated gain. 1.17 W/mm and 1.0 W/mm power outputs were obtained at 6.5 and 11.5 GHz, respectively. 43.5-percent maximum power-added efficiency was attained at 6.5 GHz.Keywords :
Etching; Fabrication; Gallium arsenide; Indium phosphide; Insulation; Laboratories; MESFETs; MISFETs; Substrates; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21214
Filename :
1483115
Link To Document :
