DocumentCode :
1086063
Title :
Ion implanted Si MESFET´s with high cutoff frequency
Author :
Fernholz, Gabi ; Beneking, Heinz
Author_Institution :
Technical University, Aachen, Federal Republic of Germany
Volume :
30
Issue :
7
fYear :
1983
fDate :
7/1/1983 12:00:00 AM
Firstpage :
837
Lastpage :
840
Abstract :
A new technology of ion-implanted silicon MESFET\´s on high-resistivity substrates has been developed to reduce substrate effects. Consequently, the devices show an improved static behavior concerning pinchoff and drain feedback. Static and dynamic performance will be presented, the latter showing 
GHz calculated from scattering parameter measurements and a large signal switching time of 60 ps. The transit frequency of the intrinsic device is 
GHz.
GHz calculated from scattering parameter measurements and a large signal switching time of 60 ps. The transit frequency of the intrinsic device is GHz.Keywords :
Boron; Cutoff frequency; FETs; Feedback; MESFETs; Parasitic capacitance; Scattering parameters; Silicon; Substrates; Time measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21218
Filename :
1483119
Link To Document :
