• DocumentCode
    1086078
  • Title

    Two-dimensional modeling of the MIS grating solar cell

  • Author

    De Visschere, Patrick

  • Author_Institution
    National Fund for Scientific Research, Belgium and Laboratories voor Elektronika, Gent, Belgium
  • Volume
    30
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    840
  • Lastpage
    849
  • Abstract
    A two-dimensional model has been developed for simulating the behavior of a metal-insulator-semiconductor (MIS) grating solar cell. In contrast with traditional methods, which solve the nonlinear semiconductor equations directly, this model solves a derived nonlinear boundary value problem, using an integral equation technique. The general characteristics of MIS grating solar cells have been calculated and are explained in terms of the underlying physical processes. In order to gain a better understanding of the collection mechanism taking place in a grating solar cell, a new concept, the "diffusion thickness of the space-charge layer" is introduced. The best-known grating solar cell is the MIS inversion layer solar cell. However, it is shown that for common values of the surface charge, an inversion layer cell with a low base doping level may not have as high an efficiency as a cell with a more heavily doped base, in which the minority-carrier flow is two-dimensional.
  • Keywords
    Charge carrier processes; Dielectrics; Gratings; Mathematical model; P-n junctions; Photovoltaic cells; Semiconductor device doping; Silicon; Substrates; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21219
  • Filename
    1483120