Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation

Author

Wu, Shye Lin ; Lee, Chung Len ; Lei, Tan Fu ; Chen, C.F. ; Chen, L.J. ; Ho, K.Z. ; Ling, Y.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

15

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

120

Lastpage

122

Abstract

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p/sup +/-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900/spl deg/C. As a result, the junction depth of the BF/sub 2/-implanted device is much larger than that of the boron-implanted device.<>

Keywords

annealing; elemental semiconductors; fluorine; ion implantation; p-n junctions; semiconductor doping; silicon; 900 C; BF/sub 2/-implanted device; F implantation; Si:BF/sub 2/-Si; annealing temperature; junction depth; oxide break-up; p/sup +/-n shallow junction formation; poly-Si emitter; poly-Si/Si interfacial oxide; polysilicon; polysilicon/Si interfacial oxide; Annealing; BiCMOS integrated circuits; Boron; Contacts; Diodes; Electric resistance; Physics; Tail; Temperature; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285410

Filename

285410