Mobility-field behavior of fully depleted SOI MOSFET´s

Author

Wang, Janet ; Kistler, Neal ; Woo, Jason ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

15

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

117

Lastpage

119

Abstract

This work reports measured effective mobility vs. effective vertical electric field and the accompanying experimental method of extraction for the fully depleted (FD) SOI MOSFET. The effective channel mobility vs. effective vertical electric field behavior was investigated as a function of the SOI film doping concentration, the SOI back-gate bias, and the SOI film thickness. The validity of using the approximation, Q/sub i/=C/sub ox/(V/sub GS//spl minus/V/sub TH/), for the inversion charge density in FD SOI is examined and experimentally confirmed.<>

Keywords

carrier mobility; doping profiles; electric fields; elemental semiconductors; insulated gate field effect transistors; semiconductor thin films; semiconductor-insulator boundaries; silicon; SOI back-gate bias; SOI film doping concentration; SOI film thickness; Si; effective channel mobility; effective mobility; effective vertical electric field; extraction; fully depleted SOI MOSFET; mobility-field behavior; Capacitance; Carrier confinement; Doping; Linear approximation; MOSFET circuits; Semiconductor process modeling; Silicon on insulator technology; Substrates; Threshold voltage; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285411

Filename

285411