• DocumentCode
    1086112
  • Title

    Two-dimensional numerical analysis of impurity atom diffusion in semiconductors

  • Author

    Buonomo, A. ; Bello, Di

  • Author_Institution
    University of Calabria, Cosenza, Italy
  • Volume
    30
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    857
  • Lastpage
    860
  • Abstract
    Linear two-dimensional diffusion of impurity atom through finite-dimension masks has been numerically examined. Numerical simulation results demonstrate the limits of the two-dimensional analytical diffusion model which was first employed in the well-known paper by Kennedy and O´Brien [1].
  • Keywords
    Boundary conditions; Diffusion processes; Doping profiles; Equations; Geometry; Numerical analysis; Numerical simulation; Semiconductor impurities; Semiconductor process modeling; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21222
  • Filename
    1483123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086112