Title :
Two-dimensional numerical analysis of impurity atom diffusion in semiconductors
Author :
Buonomo, A. ; Bello, Di
Author_Institution :
University of Calabria, Cosenza, Italy
fDate :
7/1/1983 12:00:00 AM
Abstract :
Linear two-dimensional diffusion of impurity atom through finite-dimension masks has been numerically examined. Numerical simulation results demonstrate the limits of the two-dimensional analytical diffusion model which was first employed in the well-known paper by Kennedy and O´Brien [1].
Keywords :
Boundary conditions; Diffusion processes; Doping profiles; Equations; Geometry; Numerical analysis; Numerical simulation; Semiconductor impurities; Semiconductor process modeling; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21222
