• DocumentCode
    1086237
  • Title

    An Augmented Small-Signal HBT Model With Its Analytical Based Parameter Extraction Technique

  • Author

    Degachi, Louay ; Ghannouchi, Fadhel M.

  • Author_Institution
    Ecole Polytech. de Montreal, Montreal
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    968
  • Lastpage
    972
  • Abstract
    This paper presents a simple and systematic extraction technique for an augmented heterojunction bipolar transistor (HBT) small-signal model with improved representation for the intrinsic base and external base-collector junction. The extraction results for a 1 times 10 mum2 HBT allow the investigation of the validity of the usual representation of ac emitter current crowding, as a capacitance in shunt with the spreading resistance.
  • Keywords
    equivalent circuits; heterojunction bipolar transistors; HBT model; heterojunction bipolar transistor; parameter extraction technique; Analytical models; Circuits; Electric resistance; Heterojunction bipolar transistors; Parameter extraction; Parasitic capacitance; Proximity effect; Radio frequency; Scattering parameters; Topology; AC emitter current crowding; heterojunction bipolar transistor (HBT); parameter extraction; small-signal equivalent-circuit model;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.917539
  • Filename
    4459445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086237