Title :
An Augmented Small-Signal HBT Model With Its Analytical Based Parameter Extraction Technique
Author :
Degachi, Louay ; Ghannouchi, Fadhel M.
Author_Institution :
Ecole Polytech. de Montreal, Montreal
fDate :
4/1/2008 12:00:00 AM
Abstract :
This paper presents a simple and systematic extraction technique for an augmented heterojunction bipolar transistor (HBT) small-signal model with improved representation for the intrinsic base and external base-collector junction. The extraction results for a 1 times 10 mum2 HBT allow the investigation of the validity of the usual representation of ac emitter current crowding, as a capacitance in shunt with the spreading resistance.
Keywords :
equivalent circuits; heterojunction bipolar transistors; HBT model; heterojunction bipolar transistor; parameter extraction technique; Analytical models; Circuits; Electric resistance; Heterojunction bipolar transistors; Parameter extraction; Parasitic capacitance; Proximity effect; Radio frequency; Scattering parameters; Topology; AC emitter current crowding; heterojunction bipolar transistor (HBT); parameter extraction; small-signal equivalent-circuit model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.917539
