Title :
Proposal for Q-Modulated Semiconductor Laser
Author_Institution :
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou
fDate :
3/1/2007 12:00:00 AM
Abstract :
A novel structure and mechanism for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an antiresonant cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the reflectivity of the rear reflector, and consequently the Q-factor, the lasing threshold, and the output power. An implementation structure and numerical results for a Q-modulated distributed feedback laser are presented. The monolithically integrated Q-modulated laser has potential advantages of high speed, low wavelength chirp, high extinction ratio, and high power efficiency
Keywords :
Q-factor; absorption coefficients; distributed feedback lasers; integrated optoelectronics; laser cavity resonators; monolithic integrated circuits; optical modulation; reflectivity; semiconductor lasers; Q-factor; Q-modulated laser; absorption coefficient; antiresonant cavity; distributed feedback laser; extinction ratio; high-power-efficiency laser; high-speed laser; high-speed modulation; laser rear reflector; low-wavelength-chirp laser; monolithic integration; reflectivity; semiconductor laser; Absorption; Chirp modulation; Distributed feedback devices; Laser feedback; Power generation; Power lasers; Proposals; Q factor; Reflectivity; Semiconductor lasers; $Q$-modulated laser (QML); Intensity modulation; semiconductor laser; wavelength chirp;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.891242
