DocumentCode :
1086300
Title :
Electron—Hole recombination antiblooming for virtual-phase CCD imager
Author :
Hynecek, Jaroslav
Author_Institution :
Texas Instruments, Inc., Dallas, TX
Volume :
30
Issue :
8
fYear :
1983
fDate :
8/1/1983 12:00:00 AM
Firstpage :
941
Lastpage :
948
Abstract :
This paper describes a new antiblooming concept employing localized and controlled charge removal from a photosite based on electron-hole recombination via interface traps. The concept can be applied to various types of CCD and CID devices, and is demonstrated on a 
frame transfer virtual-phase CCD imager. Results of antiblooming experiments as well as experiments addressing some of the physical parameters of the electron-hole recombination process are given.
frame transfer virtual-phase CCD imager. Results of antiblooming experiments as well as experiments addressing some of the physical parameters of the electron-hole recombination process are given.Keywords :
Charge carrier processes; Charge coupled devices; Electron traps; Energy measurement; Energy states; Instruments; Monitoring; Photonic band gap; Potential energy; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21241
Filename :
1483142
Link To Document :
