Title :
Influence of short-channel effects on dopant profiles obtained from the DC MOSFET profile method
Author_Institution :
National Bureau of Standards, Washington, DC
fDate :
8/1/1983 12:00:00 AM
Abstract :
Distortions in the dopant density profile obtained from dc MOSFET measurements due to short-channel effects are not properly predicted by present two-dimensional charge sharing, or charge conservation, models. The comparison of dopant profile data with predictions based on charge conservation models is a powerful technique for evaluating the accuracy of these models.
Keywords :
Capacitance measurement; Charge measurement; Current measurement; Distortion measurement; Equations; Frequency measurement; MOSFET circuits; Predictive models; Semiconductor process modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21242
