DocumentCode
1086310
Title
Influence of short-channel effects on dopant profiles obtained from the DC MOSFET profile method
Author
Carver, Gary P.
Author_Institution
National Bureau of Standards, Washington, DC
Volume
30
Issue
8
fYear
1983
fDate
8/1/1983 12:00:00 AM
Firstpage
948
Lastpage
954
Abstract
Distortions in the dopant density profile obtained from dc MOSFET measurements due to short-channel effects are not properly predicted by present two-dimensional charge sharing, or charge conservation, models. The comparison of dopant profile data with predictions based on charge conservation models is a powerful technique for evaluating the accuracy of these models.
Keywords
Capacitance measurement; Charge measurement; Current measurement; Distortion measurement; Equations; Frequency measurement; MOSFET circuits; Predictive models; Semiconductor process modeling; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21242
Filename
1483143
Link To Document