DocumentCode :
1086320
Title :
Multi-Mechanism Reliability Modeling and Management in Dynamic Systems
Author :
Karl, Eric ; Blaauw, David ; Sylvester, Dennis ; Mudge, Trevor
Author_Institution :
Univ. of Michigan, Ann Arbor
Volume :
16
Issue :
4
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
476
Lastpage :
487
Abstract :
Reliability failure mechanisms, such as time-dependent dielectric breakdown (TDDB), electromigration, and negative bias temperature instability (NBTI), have become a key concern in integrated circuit (IC) design. The traditional approach to reliability qualification assumes that the system will operate at maximum performance continuously under worst case voltage and temperature conditions. In reality, due to widely varying environmental conditions and an increased use of dynamic control techniques, such as dynamic voltage scaling and sleep modes, the typical system spends a very small fraction of its operational time at maximum voltage and temperature. In this paper, we show how this results in a reliability ";slack"; that can be leveraged to provide increased performance during periods of peak processing demand. We develop a novel, real time reliability model based on workload driven conditions. Based on this model, we then propose a new dynamic reliability management (DRM) scheme that results in 20%-35 % performance improvement during periods of peak computational demand while ensuring the required reliability lifetime.
Keywords :
integrated circuit design; integrated circuit reliability; dynamic control techniques; dynamic reliability management; dynamic systems management; dynamic voltage scaling; integrated circuit design; multimechanism reliability modeling; negative bias temperature instability; reliability qualification; time-dependent dielectric breakdown; Integrated circuit (IC) reliability; reliability management; system-level reliability modeling;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2007.915477
Filename :
4459694
Link To Document :
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