DocumentCode :
1086325
Title :
High Voltage Marx Generator Implementation using IGBT Stacks
Author :
Kim, Jong-Hyun ; Min, Byung-Duk ; Shenderey, Sergey ; Rim, Geun-Hie
Author_Institution :
Korea ElectroTechnol. Res. Inst., Changwon
Volume :
14
Issue :
4
fYear :
2007
Firstpage :
931
Lastpage :
936
Abstract :
High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar Transistor) stacks is proposed in this paper. To protect the Marx generator at the moment of breakdown, AOCP (Active Over-Current Protection) part is included. The Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and inductors are used to charge the high voltage capacitor at each stage without power loss. These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed Marx generator implementation uses IGBT stack with a simple driver and has modular design. This system structure gives compactness and easiness to implement the total system. Some experimental and simulated results are included to verify the system performances in this paper.
Keywords :
insulated gate bipolar transistors; power capacitors; power inductors; pulse generators; pulsed power supplies; IGBT stacks; Marx generator implementation; active over-current protection; diode stacks; inductors; insulated gate bipolar transistor; pulsed power supply; voltage capacitor; Capacitors; Driver circuits; Electric breakdown; Insulated gate bipolar transistors; Power generation; Pulse generation; Pulsed power supplies; Semiconductor diodes; Switches; Voltage;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/TDEI.2007.4286528
Filename :
4286528
Link To Document :
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