DocumentCode :
1086330
Title :
A High-Speed Variation-Tolerant Interconnect Technique for Sub-Threshold Circuits Using Capacitive Boosting
Author :
Kil, Jonggab ; Gu, Jie ; Kim, Chris H.
Author_Institution :
Intel Corp., Folsom
Volume :
16
Issue :
4
fYear :
2008
fDate :
4/1/2008 12:00:00 AM
Firstpage :
456
Lastpage :
465
Abstract :
This paper describes an interconnect technique for subthreshold circuits to improve global wire delay and reduce the delay variation due to process-voltage-temperature (PVT) fluctuations. By internally boosting the gate voltage of the driver transistors, operating region is shifted from subthreshold region to super-threshold region enhancing performance and improving tolerance to PVT variations. Simulations of a clock distribution network using the proposed driver shows a 66%-76% reduction in 3sigma clock skew value and 84%-88% reduction in clock tree delay compared to using conventional drivers. A 0.4-V test chip has been fabricated in a 0.18-mum 6-metal CMOS process to demonstrate the effectiveness of the proposed scheme. Measurement results show 2.6times faster switching speed and 2.4times less delay sensitivity under temperature variations.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; CMOS process; capacitive boosting; conventional drivers; delay variation; driver transistors; gate voltage boosting; global wire delay; high-speed variation-tolerant interconnect technique; process-voltage-temperature fluctuations; size 0.18 mum; subthreshold circuits; Capacitive boosting; clock distribution network; global wire delay; subthreshold circuits;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2007.915455
Filename :
4459695
Link To Document :
بازگشت