Title :
Fast High Voltage Switching Using Stacked MOSFETs
Author_Institution :
Nagaoka Univ. of Technol., Niigata
Abstract :
Fast switching of high voltage using stacked MOSFETs has been studied. It is shown that the effective drain-source capacitance has a negative influence in the turn-off process, especially when the load impedance is relatively high. In order to solve this problem, an alternative circuit configuration is tested where additional switching modules are used to deal with the drain-source capacitance. The experimental results have demonstrated fast switching performance, even for a high impedance load.
Keywords :
MOSFET circuits; field effect transistor switches; high-voltage engineering; power MOSFET; power semiconductor switches; effective drain-source capacitance; high-voltage switching; load impedance; stacked MOSFET; switching circuit; turn-off process; Capacitance; Circuit testing; Impedance; Inductance; MOSFETs; Power semiconductor switches; Pulse power systems; Semiconductor devices; Switching circuits; Voltage;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TDEI.2007.4286531
