DocumentCode
1086434
Title
Vectorized Monte Carlo calculation for the transport of ions in amorphous targets
Author
Petersen, Wesley P. ; Fichtner, Wolfgang ; Grosse, Eric H.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
30
Issue
9
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1011
Lastpage
1017
Abstract
This paper describes the vectorized implantation of a Monte Carlo technique to simulate the transport of energetic ions in amorphous targets. Utilizing the vector processing capabilities of a CRAY-1 computer, we have achieved speed-up factors between three to ten over equivalent scalar implementations. The method has been successfully applied to simulate typical ion-implant conditions in modern silicon device processing.
Keywords
Amorphous materials; Computational modeling; Implants; Ion implantation; Lithography; Monte Carlo methods; Semiconductor device modeling; Semiconductor materials; Solids; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21255
Filename
1483156
Link To Document