Title :
Semiconductor device simulation
Author :
Fichtner, Wolfgang ; Rose, Donald J. ; Bank, Randolph E.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
9/1/1983 12:00:00 AM
Abstract :
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables. Our examples illustrate results obtained from finite-difference and finite-element implementations. We stress the necessary 3D calculations for small-size MOSFET´s. Numerical results on inter-electrode capacitive coupling are included.
Keywords :
Circuit simulation; Costs; Coupling circuits; Nonlinear equations; Numerical simulation; Partial differential equations; Robustness; Semiconductor devices; Testing; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21256
