Title :
Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications
Author :
Maricot, S. ; Vilcot, J.P. ; Decoster, D. ; Renaud, J.C. ; Rondi, D. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B.
Author_Institution :
Dept. Hyperfrequences et Semiconduct., Univ. des Sci. et Technol. de Lille, Villeneuve D´´Ascq, France
Abstract :
Microwave impedance matching networks have been, for the first time, monolithically integrated with GaInAs p-i-n photodiodes and GaInAsP buried ridge stripe structure lasers ( lambda =1.3 mu m), both on a semi-insulating InP substrate. The microwave power transfer optical links were compared using matched and unmatched devices. Compared to an unmatched link, an improvement of 11.4 dB at 5.6 GHz (600 MHz bandwidth) is obtained for the totally matched one; this result corresponds quite well to the theoretical prediction (12 dB at 6 GHz).<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; p-i-n photodiodes; semiconductor lasers; 1.3 micron; 600 MHz; GaInAs; GaInAsP; IR; InP; buried ridge stripe structure lasers; matched links; microwave applications; microwave impedance matching networks; microwave power transfer optical links; monolithically integrated; optoelectronic devices; p-i-n photodiodes; reactive matching networks; semi-insulating InP substrate; Conductors; Diode lasers; Impedance matching; Indium phosphide; Inductors; Microwave devices; Monolithic integrated circuits; Optical fiber communication; Optoelectronic devices; Photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
