Monolithic integration of optoelectronic devices with reactive matching networks for microwave applications

Author

Maricot, S. ; Vilcot, J.P. ; Decoster, D. ; Renaud, J.C. ; Rondi, D. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B.

Author_Institution

Dept. Hyperfrequences et Semiconduct., Univ. des Sci. et Technol. de Lille, Villeneuve D´´Ascq, France

Volume

4

Issue

11

fYear

1992

Firstpage

1248

Lastpage

1250

Abstract

Microwave impedance matching networks have been, for the first time, monolithically integrated with GaInAs p-i-n photodiodes and GaInAsP buried ridge stripe structure lasers ( lambda =1.3 mu m), both on a semi-insulating InP substrate. The microwave power transfer optical links were compared using matched and unmatched devices. Compared to an unmatched link, an improvement of 11.4 dB at 5.6 GHz (600 MHz bandwidth) is obtained for the totally matched one; this result corresponds quite well to the theoretical prediction (12 dB at 6 GHz).<>

Keywords

III-V semiconductors; MMIC; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; p-i-n photodiodes; semiconductor lasers; 1.3 micron; 600 MHz; GaInAs; GaInAsP; IR; InP; buried ridge stripe structure lasers; matched links; microwave applications; microwave impedance matching networks; microwave power transfer optical links; monolithically integrated; optoelectronic devices; p-i-n photodiodes; reactive matching networks; semi-insulating InP substrate; Conductors; Diode lasers; Impedance matching; Indium phosphide; Inductors; Microwave devices; Monolithic integrated circuits; Optical fiber communication; Optoelectronic devices; Photodiodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.166957

Filename

166957