DocumentCode
1086508
Title
Two-dimensional analysis of semiconductor devices using general-purpose interactive PDE software
Author
Blue, James L. ; Wilson, Charles L.
Author_Institution
National Bureau of Standards, Washington, DC
Volume
30
Issue
9
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1056
Lastpage
1070
Abstract
Analyzing currents and fields in VLSI devices requires solving three coupled nonlinear elliptic partial differential equations in two dimensions. Historically, these equations have been solved using a special-purpose program and batch runs on a large fast computer. We use a general-purpose program and interactive runs on a large minicomputer. We discuss the physical formulation of the semiconductor equations and give three example solutions: a short-channel MOSFET near punchthrough, a DMOS power transistor in the ON state, and a beveled p-n junction. These examples demonstrate that solutions to a very general class of semiconductor-device problems can be obtained using these methods.
Keywords
Couplings; MOSFET circuits; Microcomputers; Nonlinear equations; P-n junctions; Partial differential equations; Power MOSFET; Power transistors; Semiconductor devices; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21260
Filename
1483161
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