DocumentCode
1086513
Title
Modeling the gate more accurately for power MOSFETs
Author
Wunderlich, Ronnie A. ; Ghosh, Prasanta K.
Author_Institution
Celestica Power Syst., Endicott, NY, USA
Volume
9
Issue
1
fYear
1994
fDate
1/1/1994 12:00:00 AM
Firstpage
105
Lastpage
111
Abstract
In recent years, power MOSFET devices have replaced the bipolar transistor. However, the power MOSFET is a fairly new device and current modeling techniques have not produced an accurate simulation of the gate to source. The method presented here generates a more accurate model of the transient behavior and gate to source characteristics of the power MOSFET. The results provide a better correlation between the MOSFET model and the actual device
Keywords
circuit analysis computing; digital simulation; insulated gate field effect transistors; power transistors; semiconductor device models; correlation; gate to source characteristics; modeling techniques; power MOSFETs; simulation; transient behavior; Bipolar transistors; Capacitance; Capacitors; Character generation; Circuits; MOSFETs; Power system modeling; Power system transients; Senior members; Voltage;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.285500
Filename
285500
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