DocumentCode
1086535
Title
Numerical solution of the semiconductor transport equations with current boundary conditions
Author
Grossm, Bertrand M. ; Hargrove, Michael J.
Author_Institution
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume
30
Issue
9
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1092
Lastpage
1096
Abstract
The semiconductor transport equations are solved by a hybrid finite-element method with current specified as a boundary condition at device contacts. Single carrier or bipolar devices of arbitrary shape, operating under transient or steady-state conditions, can be simulated with current sources or simple circuit elements connected to device terminals. This paper describes the numerical technique and device applications.
Keywords
Boundary conditions; Charge carrier processes; Circuit simulation; Electron mobility; Finite element methods; Poisson equations; Radiative recombination; Semiconductor impurities; Shape; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21263
Filename
1483164
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