Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction

Author

Crook, A.C. ; Cockerill, T.M. ; Forbes, D.V. ; Herzinger, C.M. ; DeTemple, T.A. ; Coleman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

6

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

619

Lastpage

622

Abstract

A reduction in the drive voltage of an electroabsorption waveguide modulator based on an AlGaAs/GaAs quantum well laser heterostructure is demonstrated by a simple change in the position of the p-n junction relative to the quantum well. This is accomplished by adjusting the doping profile and does not significantly alter the operation of the structure as a laser or degrade other aspects of device performance such as reverse breakdown voltage and series resistance. A contrast ratio of 25 dB (5 dB/100 μm) was obtained with a bias change of -2 V.

Keywords

III-V semiconductors; aluminium compounds; doping profiles; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; optical waveguides; p-n heterojunctions; semiconductor lasers; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs/GaAs quantum well laser heterostructure; contrast ratio; displaced p-n junction; doping profile; drive voltage; electroabsorption waveguide modulator; reverse breakdown voltage; series resistance; Degradation; Doping profiles; Gallium arsenide; Laser transitions; Low voltage; P-n junctions; Quantum well lasers; Waveguide junctions; Waveguide lasers; Waveguide transitions;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.285559

Filename

285559