Title :
Electrically tunable semiconductor Fabry-Perot filter
Author :
Dentai, A. ; Stone, J. ; Burrows, E.C. ; Burrus, C.A. ; Stulz, L.W. ; Zirngibl, M.
Author_Institution :
Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
A key component of Wavelength Division Multiplexed (WDM) networks is a tunable broadband wavelength demultiplexer, with good selectivity and high tuning speed. In this communication we report low waveguide loss InGaAsP Fabry-Perot filters, grown by Metal Organic Vapor Phase Epitaxy, with tuning ranges up to 3.07 nm (380 GHz). These filters have waveguides with bandgap wavelengths between 1.3 and 1.48 μm so that they are transparent at zero bias and at low tuning currents (<2 mA) for 1.55 μm light. Their performance is independent of light level and they should be capable of high speed operation.
Keywords :
III-V semiconductors; demultiplexing equipment; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical filters; optical losses; tuning; vapour phase epitaxial growth; 1.3 to 1.48 micron; 1.55 micron; 2 mA; InGaAsP; Metal Organic Vapor Phase Epitaxy; Wavelength Division Multiplexed networks; bandgap wavelengths; electrically tunable semiconductor Fabry-Perot filter; high speed operation; selectivity; transparency; tunable broadband wavelength demultiplexer; waveguide loss; Epitaxial growth; Etching; Fabry-Perot; Filters; Laser tuning; Mirrors; Photonic band gap; Semiconductor lasers; Tunable circuits and devices; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
