Simulations for improved heterostructure Gunn oscillator based on transit region doping variations

A selfconsistent ensemble Monte-Carlo procedure has been implemented within an oscillator circuit to investigate the performance of heterostructure Gunn diodes. The study includes comparisons between a conventional notch device and heterojunction oscillators having two different doping profiles. It is demonstrated that suitable tailoring of the doping concentrations within the active transit region can lead to improvements in the heterostructure performance. In particular, both the oscillator frequencies and power conversion efficiencies are enhanced, without compromising reductions in the dead zone.