640 × 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

Author

Gunapala, Sarath D. ; Bandara, Sumith V. ; Hill, Cory J. ; Ting, David Z. ; Liu, John K. ; Rafol, Sir B. ; Blazejewski, Edward R. ; Mumolo, Jason M. ; Keo, Sam A. ; Krishna, Sanjay ; Chang, Y.C. ; Shott, Craig A.

Author_Institution

California Inst. of Technol., Pasadena, CA

Volume

43

Issue

3

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

230

Lastpage

237

Abstract

Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times10¹⁰ Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature

Keywords

diffraction gratings; focal planes; infrared detectors; optical fabrication; photodetectors; semiconductor quantum dots; 60 K; InAs-InGaAs-GaAs quantum dots; dot-in-a-well structures; imaging focal plane array; noise equivalent temperature; quantum-dot infrared photodetector; reflection grating structure; Electromagnetic wave absorption; Infrared detectors; Infrared imaging; Optical imaging; Optical scattering; Photodetectors; Photonic band gap; Pixel; Quantum dots; Temperature; Focal plane array; infrared detector; quantum dots (QDs);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2006.889645

Filename

4084609