Accurate modeling for submicrometer-gate Si and GaAs MESFET´s using two-dimensional particle simulation

Device characteristics, including nonstationary carrier-transport effects such as velocity overshoot phenomena in submicrometergate Si and GaAs MESFET´s, are presented in detail by two-dimensional full Monte Carlo particle simulation. Accurate current-voltage characteristics and transient current response are successfully obtained without relaxation time approximation. Moreover, the carrier dynamics influence on device operation is clarified in a realistic device model, compared with the conventional simulation. It can be pointed out that such nonstationary carrier transport is acutely important for accurate modeling of submicrometer-gate GaAs MESFET´s, but is not as important for that of Si MESFET´s.