DocumentCode
1087004
Title
Fabrication and analysis of 1/2µm Silicon logic MESFET´s
Author
Nulman, Jaime ; Faricelli, John V. ; Krusius, J. Peter ; Frey, Jeffrey
Author_Institution
Cornell University, Ithaca, NY
Volume
30
Issue
10
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
1395
Lastpage
1401
Abstract
Submicrometer gate length MESFET logic on silicon-on-sapphire (SOS) has been explored for very high-speed switching. The measured values for gate length, current drive capability, transconductance, output conductance, pinchoff voltage, and knee voltage are 0.65 µm, 0.11 A/cm, 200 mS/cm, 5.6 mS/cm, -1 V, and 0.65 V, respectively. Time-dependent two-dimensional simulation methods based on realistic models for doping profiles, high field transport, and interfaces have been used for analysis. The sensitivity of the device characteristics has also been simulated. Simulated results are in excellent agreement with measured data.
Keywords
Analytical models; Current measurement; Fabrication; Knee; Length measurement; Logic gates; MESFETs; Silicon; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21306
Filename
1483207
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