Fabrication and analysis of 1/2µm Silicon logic MESFET´s

Submicrometer gate length MESFET logic on silicon-on-sapphire (SOS) has been explored for very high-speed switching. The measured values for gate length, current drive capability, transconductance, output conductance, pinchoff voltage, and knee voltage are 0.65 µm, 0.11 A/cm, 200 mS/cm, 5.6 mS/cm, -1 V, and 0.65 V, respectively. Time-dependent two-dimensional simulation methods based on realistic models for doping profiles, high field transport, and interfaces have been used for analysis. The sensitivity of the device characteristics has also been simulated. Simulated results are in excellent agreement with measured data.