DocumentCode
1087007
Title
8*8 flipchip assembled InGaAs detector arrays for optical interconnect
Author
Moseley, A.J. ; Kearley, M.Q. ; Morris, R.C. ; Urquhart, J. ; Goodwin, M.J. ; Harris, Gerald
Author_Institution
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Volume
27
Issue
17
fYear
1991
Firstpage
1566
Lastpage
1567
Abstract
The design and performance of detector arrays for optical interconnect are reported. These arrays consist of an InGaAs/InP heterostructure planar pin photodiode with optical access through the substrate. A selfaligned flipchip solder bond assembly process has been used to provide mechanical attachment and direct electrical connection to an electrical backplane or silicon integrated circuit. Arrays with up to 64 elements have been fabricated with mean dark current densities of 500 nA cm-2, with assembly yields in excess of 98.85% and submicrometre alignment accuracy.
Keywords
III-V semiconductors; flip-chip devices; gallium arsenide; indium compounds; optical interconnections; p-i-n diodes; photodiodes; InGaAs-InP; Si chip backplane; assembly yields; dark current densities; detector arrays; electrical backplane; heterostructure planar pin photodiode; optical interconnect; self-aligned flip-chip; selfaligned flipchip solder bond assembly process; semiconductors; submicrometre alignment accuracy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910981
Filename
132808
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