• DocumentCode
    1087007
  • Title

    8*8 flipchip assembled InGaAs detector arrays for optical interconnect

  • Author

    Moseley, A.J. ; Kearley, M.Q. ; Morris, R.C. ; Urquhart, J. ; Goodwin, M.J. ; Harris, Gerald

  • Author_Institution
    GEC-Marconi Mater. Technol. Ltd., Towcester, UK
  • Volume
    27
  • Issue
    17
  • fYear
    1991
  • Firstpage
    1566
  • Lastpage
    1567
  • Abstract
    The design and performance of detector arrays for optical interconnect are reported. These arrays consist of an InGaAs/InP heterostructure planar pin photodiode with optical access through the substrate. A selfaligned flipchip solder bond assembly process has been used to provide mechanical attachment and direct electrical connection to an electrical backplane or silicon integrated circuit. Arrays with up to 64 elements have been fabricated with mean dark current densities of 500 nA cm-2, with assembly yields in excess of 98.85% and submicrometre alignment accuracy.
  • Keywords
    III-V semiconductors; flip-chip devices; gallium arsenide; indium compounds; optical interconnections; p-i-n diodes; photodiodes; InGaAs-InP; Si chip backplane; assembly yields; dark current densities; detector arrays; electrical backplane; heterostructure planar pin photodiode; optical interconnect; self-aligned flip-chip; selfaligned flipchip solder bond assembly process; semiconductors; submicrometre alignment accuracy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910981
  • Filename
    132808