DocumentCode
1087049
Title
Gain characteristics of a distributed IMPATT device
Author
Soohoo, Jack
Author_Institution
San Francisco State University, San Francisco, CA
Volume
30
Issue
10
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
1405
Lastpage
1406
Abstract
We have analyzed the gain characteristics of a distributed IMPATT device for CW power generation in the microwave and millimeter-wave regions. The results indicate that the structure has high-gain and wide-band characteristics. With Si as diode material, the calculated gain is greater than 200 dB per centimeter over a wide range of frequencies.
Keywords
CMOS process; CMOS technology; Cutoff frequency; Distributed power generation; Electron devices; Maxwell equations; Microwave devices; Semiconductor diodes; Solid state circuits; Wideband;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21309
Filename
1483210
Link To Document