Title :
Hole injection into nontransparent n-type Si layers
Author :
Berger, Horst H.
Author_Institution :
Technical University of Berlin, West Berlin, Germany
fDate :
10/1/1983 12:00:00 AM
Abstract :
Injections have been measured on n+Si layers of high volume recombination (nontransparent layers), covering a 1:5 sheet resistance range. Taking the effective sheet resistance for reference, i.e., of the sheet down to the diffusion length only, exactly the same linear relation between injection intensity and sheet resistance as on transparent layers is observed.
Keywords :
Bipolar transistors; Charge carrier processes; Current density; Current measurement; Doping; Electrical resistance measurement; Electron devices; Silicon; Spontaneous emission; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21313
