DocumentCode
1087086
Title
Hole injection into nontransparent n-type Si layers
Author
Berger, Horst H.
Author_Institution
Technical University of Berlin, West Berlin, Germany
Volume
30
Issue
10
fYear
1983
fDate
10/1/1983 12:00:00 AM
Firstpage
1413
Lastpage
1414
Abstract
Injections have been measured on n+Si layers of high volume recombination (nontransparent layers), covering a 1:5 sheet resistance range. Taking the effective sheet resistance for reference, i.e., of the sheet down to the diffusion length only, exactly the same linear relation between injection intensity and sheet resistance as on transparent layers is observed.
Keywords
Bipolar transistors; Charge carrier processes; Current density; Current measurement; Doping; Electrical resistance measurement; Electron devices; Silicon; Spontaneous emission; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21313
Filename
1483214
Link To Document