Two-dimensional effects in hot-electron modified MOSFET´s

This brief shows how the asymmetrical behavior of hot-electron modified MOSFET´s with respect to swapping of source and drain is due to two-dimensional effects taking place within the transition region separating the device channel from the terminal junctions. In particular experimental data concerning enhanced threshold-voltage shift, asymmetrical transconductance, anomalous body effect, as well as short-channel-like behavior exhibited by the stressed transistors, are presented and discussed.