DocumentCode
1087153
Title
High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10- 
Cutoff Wavelength
Author
Delaunay, Pierre-Yves ; Nguyen, Binh Minh ; Hoffman, Darin ; Razeghi, Manijeh
Author_Institution
Center for Quantum Devices, Northwestern Univ., Evanston, IL
Volume
44
Issue
5
fYear
2008
fDate
5/1/2008 12:00:00 AM
Firstpage
462
Lastpage
467
Abstract
We report on the demonstration of a focal plane array based on Type-II InAs-GaSb superlattices grown on n-type GaSb substrate with a 50% cutoff wavelength at 10 mum. The surface leakage occurring after flip-chip bonding and underfill in the Type-II devices was suppressed using a double heterostructure design. The R0A of diodes passivated with SiO2 was 23 Omegamiddotcm2 after underfill. A focal plane array hybridized to an Indigo readout integrated circuit demonstrated a noise equivalent temperature difference of 33 mK at 81 K, with an integration time of 0.23 ms.
Keywords
III-V semiconductors; flip-chip devices; focal planes; gallium compounds; indium compounds; readout electronics; semiconductor superlattices; silicon compounds; InAs-GaSb; InAs-GaSb superlattices; Indigo readout integrated circuit; SiO2; double heterostructure design; flip-chip bonding; focal plane array; n-type GaSb substrate; noise equivalent temperature difference; surface leakage; temperature 33 mK; temperature 81 K; time 0.23 ms; type-II devices; wavelength 10 mum; Bonding; Hyperspectral imaging; Integrated circuit noise; Optical imaging; Photodetectors; Photonic band gap; Sensor arrays; Substrates; Superlattices; Temperature; Focal plane array; Type-II superlattice; infrared; photodetectors;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2008.916701
Filename
4459778
Link To Document