Title :
Refractory metal silicides: Thin-film properties and processing technology
Author :
Chow, T. Paul ; Steckl, A.J.
Author_Institution :
General Electrical Corporate Research and Development, Schenectady, NY
fDate :
11/1/1983 12:00:00 AM
Abstract :
The thin-film properties of refractory metal silicides are reviewed along with related VLSI process technology. Material considerations, including thin-film deposition techniques, film structure, electrical properties, are covered. Single-level and composite gate structures implemented with these silicides are described. Thin-film processing-plasma etching, thermal oxidation, ion-beam-enhanced silicide formation, dopant implantation-of these materials is discussed from the perspective of VLSI compatibility. Characteristics of MOS devices and circuits using these silicides are reviewed.
Keywords :
Conductivity; Delay; Integrated circuit interconnections; MOS devices; Metallization; Oxidation; Silicides; Thin film circuits; Transistors; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21327
