Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers

Author

Bour, D.P. ; Gilbert, D.B. ; Fabian, K.B. ; Bednarz, J.P. ; Ettenberg, M.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

Volume

2

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

173

Lastpage

174

Abstract

A 10000 h, 30 degrees C constant-current lifetest performed on five strained In/sub 0.2/Ga/sub 0.8/As/AlGaAs single-quantum-well lasers, with lambda approximately 930 nm, is discussed. The devices are 90- mu m*400- mu m oxide-stripe lasers with facet coatings, grown by atmospheric pressure organometallic vapor-phase epitaxy. For each diode, the current was maintained at a constant value of approximately 300 mA, corresponding to approximately 100 mW of output power. After 10/sup 4/ h, thresholds increased from an average of 84 mA to 108 mA, while quantum efficiencies were essentially unchanged. In relation to a typical 100-mW constant-power lifetest, this is equivalent to a degradation rate of less than 1%/kh.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; life testing; semiconductor device testing; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 100 mW; 10000 h; 108 mA; 30 degC; 300 mA; 400 micron; 84 mA; 90 micron; 930 nm; In/sub 0.2/Ga/sub 0.8/As-AlGaAs; atmospheric pressure organometallic vapor-phase epitaxy; constant-current lifetest; degradation rate; facet coatings; output power; oxide-stripe lasers; quantum efficiencies; single-quantum-well lasers; strained SQW; Coatings; Degradation; Diodes; Fiber lasers; Indium gallium arsenide; Pump lasers; Quantum well lasers; Solid lasers; Surface emitting lasers; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.50880

Filename

50880