Title :
The sloped-wall SWAMI—A defect-free zero bird´s-beak local oxidation process for scaled VLSI technology
Author :
Chiu, Kuang Y. ; Moll, John L. ; Cham, Kit M. ; Lin, Jung ; Lage, Craig ; Angelos, Sam ; Tillman, Robert L.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
fDate :
11/1/1983 12:00:00 AM
Abstract :
A new scheme for a Side WAll Masked Isolation (SWAMI) process is presented which takes all the advantages provided by LOCOS without suffering its difficulties. The new SWAMI technology incorporates a sloped silicon sidewall and a thin nitride layer around the island sidewalls such that both intrinsic nitride stress and volume expansion-induced stress are greatly reduced. A defect-free fully recessed zero bird´s-beak local oxidation process can be realized by the sloped-wall SWAMI. Fabrication technology and NMOS electrical characteristics will be discussed. Two-dimensional simulation of total reduction in effective channel width for ideal vertical isolation, LOCOS, and SWAMI will also be presented. A SWAMI/CMOS circuit including 60K ROM, 2.5K SRAM, and 100 segments of display driver with 5.13 × 5.22 mm2chip size has been successfully fabricated. The results indicate that SWAMI is capable of replacing LOCOS as the isolation technology for submicrometer VLSI circuit fabrication.
Keywords :
CMOS technology; Circuits; Electric variables; Fabrication; Isolation technology; MOS devices; Oxidation; Silicon; Stress; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21329