DocumentCode :
108728
Title :
Current-Mode Transceiver for Silicon Interposer Channel
Author :
Seung-Hun Lee ; Seon-Kyoo Lee ; Byungsub Kim ; Hong-June Park ; Jae-Yoon Sim
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Volume :
49
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
2044
Lastpage :
2053
Abstract :
An energy-efficient 3 Gb/s current-mode interface scheme is proposed for on-chip global interconnects and silicon interposer channels. The transceiver core consists of an open-drain transmitter with one-tap pre-emphasis and a current sense amplifier load as the receiver. The current sense amplifier load is formed by stacking a PMOS diode stage and a cross-coupled NMOS stage, providing an optimum current-mode receiver without any bias current. The proposed scheme is verified with two cases of transceivers implemented in 65 nm CMOS. A 10 mm point-to-point data-only channel shows an energy efficiency of 9.5 fJ/b/mm, and a 20 mm four-drop source-synchronous link achieves 29.4 fJ/b/mm including clock and data channels.
Keywords :
CMOS integrated circuits; elemental semiconductors; energy conservation; radio transceivers; silicon; telecommunication channels; CMOS; PMOS diode stage; bit rate 3 Gbit/s; cross-coupled NMOS stage; current sense amplifier load; current-mode interface scheme; current-mode receiver; current-mode transceiver; energy efficiency; four-drop source-synchronous link; interposer channel; on-chip global interconnects; open-drain transmitter; point-to-point data-only channel; size 10 mm; size 20 mm; size 65 nm; Bandwidth; Receivers; Resistance; Silicon; System-on-chip; Transceivers; Transmitters; Memory interface; on-chip link; silicon interposer; transceiver; wireline;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2336213
Filename :
6863712
Link To Document :
بازگشت