Selective low-pressure silicon epitaxy for MOS and bipolar transistor application

The selective low-pressure epitaxy is presented in this paper. In contrast to LOCOS technology, this process starts with structuring a thick field oxide by anisotropic RIE etching. Then monocrystalline silicon is grown selectively in the windows formed. Si-gate MOS transistors have been produced using this technology. In the field of bipolar transistors, reactive ion etching and selective low-pressure epitaxy has been used to optimize the Schottky collector transistor to a nearly one-dimensional structure. These transistors have been built on a submicrometer epitaxial layer.