Title :
I-3 recent development and future trends in latchup prevention in scaled CMOS
fDate :
11/1/1983 12:00:00 AM
Keywords :
Bipolar transistors; CMOS technology; DH-HEMTs; High speed optical techniques; Indium phosphide; Optical losses; Optical sensors; Semiconductor device modeling; Temperature sensors; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21339
