• DocumentCode
    1087395
  • Title

    I-3 recent development and future trends in latchup prevention in scaled CMOS

  • Author

    Troutman, R.R.

  • Volume
    30
  • Issue
    11
  • fYear
    1983
  • fDate
    11/1/1983 12:00:00 AM
  • Firstpage
    1564
  • Lastpage
    1565
  • Keywords
    Bipolar transistors; CMOS technology; DH-HEMTs; High speed optical techniques; Indium phosphide; Optical losses; Optical sensors; Semiconductor device modeling; Temperature sensors; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21339
  • Filename
    1483240