Title :
IIA-3 (Al,In)As/(Ga,In)As heterojunction bipolar transistors grown by molecular beam epitaxy
Author :
Malik, R.J. ; Hayes, J.R. ; Capasso, Federico ; Alavi, K. ; Cho, Andrew Y.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Bipolar transistors; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21343
