DocumentCode
1087443
Title
IIA-3 (Al,In)As/(Ga,In)As heterojunction bipolar transistors grown by molecular beam epitaxy
Author
Malik, R.J. ; Hayes, J.R. ; Capasso, Federico ; Alavi, K. ; Cho, Andrew Y.
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1567
Lastpage
1567
Keywords
Bipolar transistors; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21343
Filename
1483244
Link To Document