DocumentCode
1087483
Title
IIA-6 sensitivity of threshold voltage and sheet carrier concentration to material and electronic parameters in a HEMT device
Author
Tiwari, Sunita
Volume
30
Issue
11
fYear
1983
fDate
11/1/1983 12:00:00 AM
Firstpage
1568
Lastpage
1569
Keywords
Doping; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; High speed integrated circuits; Ring oscillators; Sheet materials; Temperature sensors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21346
Filename
1483247
Link To Document