Title :
Efficient electroabsorption in InGaAsP/InGaAsP MQW optical waveguide
Author :
Bigan, E. ; Ougazzaden, A. ; Huet, Fabrice ; Carre, M. ; Carenco, A. ; Mircea, A.
Author_Institution :
Lab. de Bagneux, CNET, France
Abstract :
Efficient electroabsorption in an InGaAsP/InGaAsP MQW optical waveguide modulator structure is reported. A 17 dB extinction ratio is obtained by applying a 3.5 V drive voltage to a 78 mu m long waveguide operating at 1.54 mu m under TE-polarisation mode. The on-state attenuation is only 2 dB.
Keywords :
III-V semiconductors; electroabsorption; gallium arsenide; indium compounds; optical modulation; optical waveguide components; optical waveguides; semiconductor quantum wells; 1.54 micron; 2 dB; 3.5 V; 78 micron; InGaAsP-InGaAsP; MQW optical waveguide modulator structure; QCSE; TE-polarisation mode; drive voltage; electroabsorption; extinction ratio; on-state attenuation; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911006
