• DocumentCode
    1087490
  • Title

    Efficient electroabsorption in InGaAsP/InGaAsP MQW optical waveguide

  • Author

    Bigan, E. ; Ougazzaden, A. ; Huet, Fabrice ; Carre, M. ; Carenco, A. ; Mircea, A.

  • Author_Institution
    Lab. de Bagneux, CNET, France
  • Volume
    27
  • Issue
    18
  • fYear
    1991
  • Firstpage
    1607
  • Lastpage
    1609
  • Abstract
    Efficient electroabsorption in an InGaAsP/InGaAsP MQW optical waveguide modulator structure is reported. A 17 dB extinction ratio is obtained by applying a 3.5 V drive voltage to a 78 mu m long waveguide operating at 1.54 mu m under TE-polarisation mode. The on-state attenuation is only 2 dB.
  • Keywords
    III-V semiconductors; electroabsorption; gallium arsenide; indium compounds; optical modulation; optical waveguide components; optical waveguides; semiconductor quantum wells; 1.54 micron; 2 dB; 3.5 V; 78 micron; InGaAsP-InGaAsP; MQW optical waveguide modulator structure; QCSE; TE-polarisation mode; drive voltage; electroabsorption; extinction ratio; on-state attenuation; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911006
  • Filename
    132837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1087490