Title :
IIA-7 ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors
Author :
Lee, Charlotte P. ; Miller, Douglas L. ; Hou, Dong ; Anderson, R.J.
fDate :
11/1/1983 12:00:00 AM
Keywords :
Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; High speed integrated circuits; MODFETs; MOSFETs; Microelectronics; Ring oscillators; Temperature measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21347
