Title :
IIB-1 two components of tunneling current in metal-oxide-semiconductor structures
Author :
Eitan, B. ; Kolodny, Avinoam
fDate :
11/1/1983 12:00:00 AM
Keywords :
Charge carrier processes; Current measurement; Dielectric losses; Electrons; Interface states; MOS capacitors; Silicon; Substrates; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21349
