Title :
High frequency GaAs switched capacitor filter implemented with GaAs insulated gate FET switches
Author :
Luck, J.L. ; Taylor, J.T. ; Swanson, J.G. ; Haigh, D.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´s Coll., London, UK
Abstract :
A switched capacitor filter implemented with 5 mu m GaAs IGFET switches and GaAs MESFET operational amplifiers is presented. The circuit is clocked at 25 MHz. By scaling to 1 mu m IGFETs, a switching speed of about 625 MHz should be attainable. Use of GaAs IGFET switches is shown to greatly reduce power consumption and complexity of the circuit. The low frequency switching instability of the GaAs IGFET is shown to be of no consequence in this application.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hybrid integrated circuits; insulated gate field effect transistors; operational amplifiers; switched capacitor filters; 25 MHz; 5 micron; GaAs; IGFET switches; MESFET operational amplifiers; insulated gate FET switches; power consumption reduction; scaling; semiconductors; switched capacitor filter; switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911012
