DocumentCode

1087561

Title

IIB-3 analysis and modeling of floating-gate E2Prom cells

Author

Kolodny, Avinoam ; Nieh, S. ; Eitan, B. ; Shappir, Joseph

Volume

30

Issue

11

fYear

1983

fDate

11/1/1983 12:00:00 AM

Firstpage

1572

Lastpage

1572

Keywords

Capacitance; Design optimization; Dielectric devices; Electrons; MOSFETs; Nonvolatile memory; Numerical models; Silicon; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21351

Filename

1483252