Title :
Low-threshold and narrow-linewidth 1.5 mu m compressive-strained multiquantum-well distributed-feedback lasers
Author :
Zah, C.E. ; Bhat, Ritesh ; Menocal, S.G. ; Favire, F. ; Lin, P.S.D. ; Andreadakis, N.C. ; Pathak, Bimalendu ; Koza, M.A. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
1.5 mu m compressive-strained multiquantum-well distributed-feedback lasers have been fabricated and characterised. 5.5 mA threshold current, 1 MHz mW linewidth-power product, and 600 kHz minimum linewidth were measured on 500 mu m long devices. Measured threshold current as low as 2.2 mA was also obtained on 150 mu m long devices. Both low threshold and narrow linewidth are attributed to the reduced transparency current and linewidth enhancement factor due to the effect of strain.
Keywords :
distributed feedback lasers; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; 5.5 to 2.2 mA; 500 to 150 micron; 600 kHz; compressive-strained; distributed-feedback lasers; effect of strain; linewidth; linewidth enhancement factor; linewidth-power product; low threshold; multiquantum-well; narrow-linewidth; reduced transparency current; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911018
